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1

Reactive ion etching of dielectrics and silicon for photovoltaic applications

Prakash N. K. Deenapanray, C. S. Athukorala, Daniel Macdonald, W. E. Jellett, E. Franklin, V. E. Everett, K. J. Weber, A. W. Blakers

Journal:

Progress in Photovoltaics: Research and Applications

Année:

2006

Langue:

english

Fichier:

PDF, 278 KB

english, 2006

2

Silane Flow Rate Dependence of SiO[sub x] Cap Layer Induced Impurity-Free Intermixing of GaAs/AlGaAs Quantum Wells

Deenapanray, Prakash N. K., Tan, H. H., Cohen, Michael I., Gaff, Keith, Petravic, Mladen, Jagadish, C.

Journal:

Journal of The Electrochemical Society

Année:

2000

Langue:

english

Fichier:

PDF, 411 KB

english, 2000

3

Deep Level Transient Spectroscopy of Defects in High-Energy Light-Particle Irradiated Si

Auret, F. Danie, Deenapanray, Prakash N.K.

Journal:

Critical Reviews in Solid State and Material Sciences

Année:

2004

Langue:

english

Fichier:

PDF, 2.75 MB

english, 2004

4

System Dynamics Modelling of the Power Sector in Mauritius

Deenapanray, Prakash N. K., Bassi, Andrea M.

Journal:

Environmental and Climate Technologies

Année:

2015

Langue:

english

Fichier:

PDF, 1.19 MB

english, 2015

5

Angular and energy dependence of the ion beam oxidation of Si using oxygen ions from a duoplasmatron source

Deenapanray, Prakash N. K., Petravic, Mladen

Journal:

Surface and Interface Analysis

Année:

1999

Langue:

english

Fichier:

PDF, 175 KB

english, 1999

6

On the segregation of Ca at SiO2/Si interface during oxygen ion bombardment

Deenapanray, Prakash N. K., Petravic, Mladen

Journal:

Surface and Interface Analysis

Année:

2000

Langue:

english

Fichier:

PDF, 128 KB

english, 2000

7

Pulsed anodic oxidation of GaAs for impurity-free interdiffusion of GaAs/AlGaAs quantum wells

Prakash N. K. Deenapanray, L. Fu, Mladen Petravic, C. Jagadish, Bin Gong, Robert N. Lamb

Journal:

Surface and Interface Analysis

Année:

2000

Langue:

english

Fichier:

PDF, 135 KB

english, 2000

8

DLTS of low-energy hydrogen ion implanted n-Si

Prakash N.K. Deenapanray

Journal:

Physica B: Condensed Matter

Année:

2003

Langue:

english

Fichier:

PDF, 213 KB

english, 2003

9

On defects created in 45 keV H−-implanted n-type Cz Si: a fluence dependence and isochronal annealing study

Prakash N.K. Deenapanray

Journal:

Physica B: Condensed Matter

Année:

2001

Langue:

english

Fichier:

PDF, 117 KB

english, 2001

10

Effect of rapid thermal annealing on the electrical properties of ion-beam-synthesized oxide layers using 12 keV O2+ bombardment of Si

Prakash N. K. Deenapanray

Journal:

Surface and Interface Analysis

Année:

2001

Langue:

english

Fichier:

PDF, 210 KB

english, 2001

11

Impurity-free intermixing of GaAs/AlGaAs quantum wells using SiO[sub x] capping: Effect of nitrous oxide flow rate

Deenapanray, Prakash N. K., Jagadish, C.

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Année:

2001

Langue:

english

Fichier:

PDF, 284 KB

english, 2001

12

The Role of Silicon Interstitials in the Formation of Boron-Oxygen Defects in Crystalline Silicon

Macdonald, Daniel, Deenapanray, Prakash N.K., Cuevas, Andres, Diez, S., Glunz, Stephan W.

Journal:

Solid State Phenomena

Année:

2005

Langue:

english

Fichier:

PDF, 286 KB

english, 2005

13

The experience of ISLANDS in deploying system dynamics modeling as an integrated policy tool

Deenapanray, Prakash N K, Bassi, Andrea M

Journal:

Natural Resources Forum (John Wiley and Sons)

Année:

2014

Langue:

english

Fichier:

PDF, 831 KB

english, 2014

14

Defect engineering in annealed n-type GaAs epilayers using SiO[sub 2]/Si[sub 3]N[sub 4] stacking layers

Deenapanray, Prakash N. K., Martin, A., Jagadish, C.

Journal:

Applied Physics Letters

Année:

2001

Langue:

english

Fichier:

PDF, 301 KB

english, 2001

15

Formation rates of iron-acceptor pairs in crystalline silicon

Macdonald, Daniel, Roth, Thomas, Deenapanray, Prakash N. K., Bothe, Karsten, Pohl, Peter, Schmidt, Jan

Journal:

Journal of Applied Physics

Année:

2005

Langue:

english

Fichier:

PDF, 328 KB

english, 2005

16

Trap-limited migration of vacancy-type defects in 7.5 keV H[sup −]-implanted Si

Deenapanray, Prakash N. K.

Journal:

Applied Physics Letters

Année:

2002

Langue:

english

Fichier:

PDF, 363 KB

english, 2002

17

Onset of implant-related recombination in self-ion implanted and annealed crystalline silicon

Macdonald, Daniel, Deenapanray, Prakash N. K., Diez, Stephan

Journal:

Journal of Applied Physics

Année:

2004

Langue:

english

Fichier:

PDF, 329 KB

english, 2004

18

Segregation effects of Li, K, and F in Si during depth profiling by oxygen ions

Deenapanray, Prakash N. K., Petravic, Mladen

Journal:

Journal of Applied Physics

Année:

2000

Langue:

english

Fichier:

PDF, 361 KB

english, 2000

19

Dynamics of the ion beam induced nitridation of silicon

Deenapanray, Prakash N. K.

Journal:

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Année:

2002

Langue:

english

Fichier:

PDF, 409 KB

english, 2002

20

Electrical transients in the ion-beam-induced nitridation of silicon

Petravic, Mladen, Deenapanray, Prakash N. K.

Journal:

Applied Physics Letters

Année:

2001

Langue:

english

Fichier:

PDF, 239 KB

english, 2001

21

Implant isolation of Zn-doped GaAs epilayers: Effects of ion species, doping concentration, and implantation temperature

Deenapanray, Prakash N. K., Gao, Q., Jagadish, C.

Journal:

Journal of Applied Physics

Année:

2003

Langue:

english

Fichier:

PDF, 356 KB

english, 2003

22

Low energy O[sub 2][sup +] and N[sub 2][sup +] beam-induced profile broadening effects in Si

Deenapanray, Prakash N. K., Petravic, Mladen

Journal:

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Année:

2001

Langue:

english

Fichier:

PDF, 368 KB

english, 2001

23

Defect Evolution in Annealed p-type GaAsN Epilayers Grown by Metalorganic Chemical Vapour Deposition

Gao, Qiang, Tan, Hark Hoe, Jagadish, Chennupati, Deenapanray, Prakash N. K.

Journal:

Japanese Journal of Applied Physics

Année:

2003

Langue:

english

Fichier:

PDF, 127 KB

english, 2003

24

Electrical Characterization of Electron Beam Induced Defects in Epitaxially Grown Si1-xGex

Mamor, M., Auret, F.D., Goodman, S.A., Myburg, G., Deenapanray, Prakash N.K., Meyer, W.E.

Journal:

Materials Science Forum

Année:

1997

Fichier:

PDF, 448 KB

1997

25

Electrical and Optical Characterisation of Defects Induced in Epitaxially Grown n-Si During 1 keV Noble Gas Ion Bombardment

Deenapanray, Prakash N.K., Auret, F.D., Myburg, G., Meyer, W.E., Goodman, S.A.

Journal:

Materials Science Forum

Année:

1997

Fichier:

PDF, 515 KB

1997

26

Defect Engineering in Impurity-Free Disordered (Al)GaAs for Optoelectronic Devices Application

Deenapanray, Prakash N.K.

Journal:

Defect and Diffusion Forum

Année:

2004

Langue:

english

Fichier:

PDF, 355 KB

english, 2004

27

Electrical Characterization of Impurity-Free Disordered p-Type GaAs

Deenapanray, Prakash N. K., Coleman, V. A., Jagadish, C.

Journal:

Electrochemical and Solid-State Letters

Année:

2003

Langue:

english

Fichier:

PDF, 73 KB

english, 2003

28

Effect of Stress on Impurity-Free Quantum Well Intermixing

Deenapanray, Prakash N. K., Jagadish, C.

Journal:

Electrochemical and Solid-State Letters

Année:

2001

Langue:

english

Fichier:

PDF, 67 KB

english, 2001

29

Electronic Properties of Defects Introduced in n- and p-Type Si1-xGex During Ion Etching

Goodman, S.A., Auret, F.D., Mamor, M., Deenapanray, Prakash N.K., Meyer, W.E.

Journal:

Materials Science Forum

Année:

1997

Fichier:

PDF, 471 KB

1997

30

Electrical Characterization of Defects Introduced During Plasma-Based Processing of GaAs

Auret, F.D., Goodman, S.A., Myburg, G., Meyer, W.E., Deenapanray, Prakash N.K., Murtagh, M., Ye, Shu-Ren, Masterson, H.J., Beechinor, J.T., Crean, G.M.

Journal:

Materials Science Forum

Année:

1997

Fichier:

PDF, 511 KB

1997

31

Defect Formation by Low Energy Ions during Sputter Deposition of TiW and Au on Epitaxially Grown n-Si at Different Plasma Pressures

Deenapanray, Prakash N.K., Auret, F.D., Myburg, G., Hayes, M., Meyer, W.E., Schutte, C.

Journal:

Materials Science Forum

Année:

1997

Fichier:

PDF, 369 KB

1997

32

Electrical Properties of Sc Schottky Barrier Diodes Fabricated on Argon-Ion Sputtered p-GaAs

Goodman, Stewart A., Auret, F. Danie, Deenapanray, Prakash N. K., Myburg, Gerrit

Journal:

Japanese Journal of Applied Physics

Année:

1998

Langue:

english

Fichier:

PDF, 927 KB

english, 1998

33

Minority Carrier Lifetime Properties of Reactive Ion Etched p-Type Float Zone Si

Deenapanray, Prakash N. K., Hörteis, M., Macdonald, Daniel, Weber, K. J.

Journal:

Electrochemical and Solid-State Letters

Année:

2005

Langue:

english

Fichier:

PDF, 99 KB

english, 2005

34

A Comparison of Low-Energy As Ion Implantation and Impurity-Free Disordering Induced Defects in N-Type GaAs Epitaxial Layers

Deenapanray, Prakash N. K., Svensson, B. G., Tan, H. H., Jagadish, C.

Journal:

Japanese Journal of Applied Physics

Année:

2003

Langue:

english

Fichier:

PDF, 357 KB

english, 2003

35

[IEEE 2006 IEEE 4th World Conference on Photovoltaic Energy Conference - Waikoloa, HI (2006.05.7-2006.05.12)] 2006 IEEE 4th World Conference on Photovoltaic Energy Conference - Towards a Simplified 20% Efficient Sliver Cell

Franklin, Evan, Blakers, Andrew, Weber, Klaus, Everett, Vernie, Deenapanray, Prakash

Année:

2006

Langue:

english

Fichier:

PDF, 287 KB

english, 2006

36

On the Pulsed Anodic Oxidation of n[sup +]-InP

Deenapanray, Prakash N. K., Martin, A., Lever, P., Jagadish, C.

Journal:

Electrochemical and Solid-State Letters

Année:

2002

Langue:

english

Fichier:

PDF, 336 KB

english, 2002

37

On the Pulsed Anodic Oxidation of n[sup +]-InP

Deenapanray, Prakash N. K., Martin, A., Lever, P., Jagadish, C.

Journal:

Electrochemical and Solid-State Letters

Année:

2002

Fichier:

PDF, 336 KB

2002

38

Energy recovery from municipal solid waste in Mauritius: Opportunities and challenges

Neehaul, Nirvana, Jeetah, Pratima, Deenapanray, Prakash

Journal:

Environmental Development

Année:

2019

Fichier:

PDF, 968 KB

2019